PMN45EN,165 Details_PMN45EN,165 PDF Document_NXP USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	40mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 4.5 V
Vgs (Max)	20V
Input Capacitance (Ciss) (Max) @ Vds	495 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457

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