APT5018SFLLG Details_APT5018SFLLG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	180mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	2596 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D3 [S]
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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