DMN2450UFB4-7B Details_DMN2450UFB4-7B PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.3 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	56 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN

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