BSM180C12P2E202 Details_BSM180C12P2E202 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1360W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

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