BBS3002-DL-E Details_BBS3002-DL-E PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	280 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13.2 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SMP-FD
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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