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MOSFETs - Single
IRF6898MTR1PBF Picture

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IRF6898MTR1PBF

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In Stock:19,268(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 213A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5435 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.1W (Ta), 78W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Other
Price advantage, IRF6898MTR1PBF is available in stock and can be delivered on the same day
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