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MOSFETs - Single
C3M0160120J Picture

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C3M0160120J

  • Cree/Wolfspeed
  • New
  • SICFET N-CH 1200V 17A TO263-7
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In Stock:3,925(Ref. price)
Qty.Unit PriceExt. Price
1
$5.145
$5.145
Documents
Specifications
DescriptionDetails
Series
C3M™
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id
3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 15 V
Vgs (Max)
+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds
632 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Other
Price advantage, C3M0160120J is available in stock and can be delivered on the same day
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