TPH3R506PL,LQ Details_TPH3R506PL,LQ PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIX-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4420 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	830mW (Ta), 116W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

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