NVS4409NT1G Details_NVS4409NT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	350mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	280mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3 (SOT323)
Package / Case	SC-70, SOT-323

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