AUIRFSL3206 Details_AUIRFSL3206 PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	6540 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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