SI1051X-T1-E3 Details_SI1051X-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	122mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.45 nC @ 5 V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666

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