SIHH28N60E-T1-GE3 Details_SIHH28N60E-T1-GE3 PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	E
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	98mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	129 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2614 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

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