IRLU8726PBF Details_IRLU8726PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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