IPT60R022S7XTMA1 Details_IPT60R022S7XTMA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™S7
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	22mOhm @ 23A, 12V
Vgs(th) (Max) @ Id	4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 12 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5639 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-2
Package / Case	8-PowerSFN

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