IRFHM8334TRPBF-INF Details_IRFHM8334TRPBF-INF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN-Dual (3.3x3.3), Power33
Package / Case	8-PowerVDFN

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