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MOSFETs - Single
SIB437EDKT-T1-GE3 Picture

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SIB437EDKT-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 8V 9A PPAK TSC75-6
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In Stock:17,162(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 13W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® TSC75-6
Package / Case
PowerPAK® TSC-75-6
Other
Price advantage, SIB437EDKT-T1-GE3 is available in stock and can be delivered on the same day
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