STP180N4F6 Details_STP180N4F6 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	STripFET™ F6
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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