CPH6445-TL-E Details_CPH6445-TL-E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	117mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	6-CPH
Package / Case	SOT-23-6 Thin, TSOT-23-6

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