IRFHM8337TRPBF-IR Details_IRFHM8337TRPBF-IR PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,754(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.15520	$0.15520

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	8.1 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	755 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN-Dual (3.3x3.3), Power33
Package / Case	8-PowerVDFN

Other

Price advantage, IRFHM8337TRPBF-IR is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BSC080N03MSG	Infineon Technologies	MOSFETs - Single	Datasheet	BSC080N03 - 12V-300V N-CHANNEL P	$0.22310	In Stock:13809
STU4N62K3	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 620V 3.8A IPAK	$1.41120	In Stock:20900
AUIRF2804L-313	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 40V 195A TO262	No price	In Stock:20906
SI5449DC-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 3.1A 1206-8	No price	In Stock:20910
SPP11N65C3XKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 650V 11A TO220-3	No price	In Stock:20912