SCT3022ALGC11 Details_SCT3022ALGC11 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id	5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2208 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	339W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

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