TK1P90A,LQ(CO Details_TK1P90A,LQ(CO PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	20W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	PW-MOLD
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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