PMN48XP,125 Details_PMN48XP,125 PDF Document_NXP Semiconductors-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	530mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457

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