SSM3J09FU,LF Details_SSM3J09FU,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Rds On (Max) @ Id, Vgs	2.7Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	22 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	USM
Package / Case	SC-70, SOT-323

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