NTH4L020N120SC1 Details_NTH4L020N120SC1 PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	2943 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	510W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4

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