2SK209-BL(TE85L,F) Details_2SK209-BL(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	10mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	13 pF @ 10 pV
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	-55°C ~ 125°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	SC-59
Package / Case	TO-236-3, SC-59, SOT-23-3

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