PMN23UN,135 Details_PMN23UN,135 PDF Document_NXP USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10.6 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457

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