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MOSFETs - Single
NTD4860N-35G Picture

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NTD4860N-35G

  • ON Semiconductor
  • New
  • MOSFET N-CH 25V 10.4A/65A IPAK
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1308 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.28W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Stub Leads, IPak
Other
Price advantage, NTD4860N-35G is available in stock and can be delivered on the same day
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