IRFS7530-7PPBF Details_IRFS7530-7PPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®, StrongIRFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	354 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12960 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

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