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MOSFETs - Single
IXUN280N10 Picture

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IXUN280N10

  • IXYS
  • New
  • MOSFET N-CH 100V 280A SOT-227B
  • Datasheet download
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In Stock:17,230(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
280A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5mOhm @ 140A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
440 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
18000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
770W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Other
Price advantage, IXUN280N10 is available in stock and can be delivered on the same day
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