CPC5602CTR Details_CPC5602CTR PDF Document_IXYS Integrated Circuits Division-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	350 V
Current - Continuous Drain (Id) @ 25°C	5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-0.35V
Rds On (Max) @ Id, Vgs	14Ohm @ 50mA, 350mV
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 0 V
FET Feature	Depletion Mode
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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