AOTF2916L Details_AOTF2916L PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 23.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3F
Package / Case	TO-220-3 Full Pack

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