TPC6009-H(TE85L,FM Details_TPC6009-H(TE85L,FM PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

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Specifications

Description	Details
Series	U-MOSVI-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	81mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6

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