SUD40N02-08-E3 Details_SUD40N02-08-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2660 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	8.3W (Ta), 71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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