SI1071X-T1-GE3 Details_SI1071X-T1-GE3 PDF Document_Vishay Siliconix-Galaxy Core City

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	960mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	167mOhm @ 960mA, 10V
Vgs(th) (Max) @ Id	1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.3 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666

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