IRLS3034TRL7PP Details_IRLS3034TRL7PP PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 200A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10990 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	380W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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