PMN230ENEX Details_PMN230ENEX PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	222mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	177 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	475mW (Ta), 3.9W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457

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