RP1A090ZPTR Details_RP1A090ZPTR PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	12mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	7400 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MPT6
Package / Case	6-SMD, Flat Leads

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