TPC8134,LQ(S Details_TPC8134,LQ(S PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	52mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)

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