UPA2600T1R-E2-AX Details_UPA2600T1R-E2-AX PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	19.1mOhm @ 3.5A, 2.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	7.9 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-HUSON (2x2)
Package / Case	6-PowerWDFN

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