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MOSFETs - Single
2N6660JTVP02 Picture

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2N6660JTVP02

  • Vishay Siliconix
  • New
  • MOSFET N-CH 60V 990MA TO205AD
  • Datasheet download
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In Stock:20,070(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-205AD (TO-39)
Package / Case
TO-205AD, TO-39-3 Metal Can
Other
Price advantage, 2N6660JTVP02 is available in stock and can be delivered on the same day
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