PSMNR90-40SSHJ Details_PSMNR90-40SSHJ PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	375A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12888 pF @ 25 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	375W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK88 (SOT1235)
Package / Case	SOT-1235

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