MSC060SMA070S Details_MSC060SMA070S PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	75mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Vgs (Max)	+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1175 pF @ 700 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D3PAK
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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