TJ8S06M3L,LXHQ Details_TJ8S06M3L,LXHQ PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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