UPA2803T1L-E2-AY Details_UPA2803T1L-E2-AY PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	5.8mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 4 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	2.45 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-DFN3333 (3.3x3.3)
Package / Case	8-VDFN Exposed Pad

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