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MOSFETs - Single
IXFB120N50P2 Picture

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IXFB120N50P2

  • IXYS
  • New
  • MOSFET N-CH 500V 120A PLUS264
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In Stock:18,810(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HiPerFET™, PolarHV™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
43mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
19000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS264™
Package / Case
TO-264-3, TO-264AA
Other
Price advantage, IXFB120N50P2 is available in stock and can be delivered on the same day
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