LND01K1-G Details_LND01K1-G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	9 V
Current - Continuous Drain (Id) @ 25°C	330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 100mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+0.6V, -12V
Input Capacitance (Ciss) (Max) @ Vds	46 pF @ 5 V
FET Feature	Depletion Mode
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-25°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-5
Package / Case	SC-74A, SOT-753

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