CSD25402Q3AT Details_CSD25402Q3AT PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.7 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1790 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSONP (3x3.15)
Package / Case	8-PowerVDFN

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