CSD17579Q3AT Details_CSD17579Q3AT PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	998 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 29W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSONP (3x3.15)
Package / Case	8-PowerVDFN

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