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IRLR6225PBF Picture

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IRLR6225PBF

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In Stock:4,895(Ref. price)
Qty.Unit PriceExt. Price
1
$0.33250
$0.33250
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
4mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
3770 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-PAK (TO-252AA)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IRLR6225PBF is available in stock and can be delivered on the same day
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