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MOSFETs - Single
SIHFS11N50A-GE3 Picture

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SIHFS11N50A-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 500V 11A TO263
  • Datasheet download
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In Stock:20,076(Ref. price)
Qty.Unit PriceExt. Price
1
$1.08797
$1.08797
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D²Pak)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, SIHFS11N50A-GE3 is available in stock and can be delivered on the same day
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